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Название: Emerging Non-volatile Memory Technologies: Physics, Engineering, and Applications
Автор: Editors Wen Siang Lew, Gerard Joseph Lim, Putu Andhita Dananjaya
Издательство: Springer
Год: 2021
Страниц: 438
Размер: 20.47 МБ
Формат: PDF
Язык: English
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices.