Название: Multi-run Memory Tests for Pattern Sensitive Faults Автор: Ireneusz Mrozek Издательство: Springer Год: 2018 Формат: PDF Размер: 2 Мб Язык: английский / English
This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.
Разделы сайта
Авторизация
Реклама
Multi-run Memory Tests for Pattern Sensitive Faults 
