Название: Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Автор: Yue Hao and Jin Feng Zhang
Издательство: CRC Press
Год: 2016
Формат: PDF
Размер: 21 Мб
Язык: английский / English

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.