Название: Multigate Transistors for High Frequency Applications
Автор: K. Sivasankaran, Partha Sharathi Mallick
Издательство: Springer
Год: 2023
Страниц: 98
Язык: английский
Формат: pdf (true), epub
Размер: 21.5 MB

This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.

The transistor is one of the most important inventions in history which changed the world. The world is moving toward reducing the size of transistors to accommodate more in number, lesser power consumption, smaller delay, better performance, and reliability. However, the downscaling of conventional planar metal-oxide-semiconductor field-effect transistors (MOSFETs) is creating many problems such as the increase in leakage currents and short channel effects (SCEs). Most of the problems due to short channel effects and leakage currents in MOSFETs can be solved by improving the controllability of the gate. Researchers introduced multigate FETs instead of single-gate MOSFET to have better controllability of the channel. The multigate FETs provide better performance in terms of higher on current (Ion), lower off current (Ioff), and SCE suppression capability. With the evolution of these multigate transistors with shorter gate lengths, the high-frequency capabilities of transistors reached the GHz regime and the radio frequency (RF) circuit applications have been steadily growing.

There exist several textbooks on multigate transistors, some of these books focus mainly on the physics and technology of multigate FETs, and a few titles are available with circuit applications of multigate FETs. However, to our knowledge, no book contains a detailed study on the high-frequency applications of these devices. This book contains seven chapters.

Chapter 1 shows the impact of scaling followed by a detailed report on the roadmap of semiconductor devices for RF applications. Also, the evolution of the multigate transistors is presented.

In Chap. 2, a detailed theory on Figures of Merit (FoM) of RF transistors and RF stability is presented followed by the design challenges of FET devices for RF applications.

Chapter 3 presents the stability factor modeling of DG MOSFETs. The gate and drain bias dependency on RF stability performance is discussed. The impact of gate spacer length and silicon body thickness on RF stability performance of DG MOSFETs is discussed, and finally, the bias and geometry optimized DG MOSFETs are presented.

RF stability performance and the impact of process variation on RF stability performance of DG Tunnel FET are presented in Chap. 4. A non-quasi static model is presented to extract the device’s small-signal parameters. The optimized device parameters are listed after the detailed process variation study to operate DG Tunnel FET for RF applications.

Chapter 5 presents an RF stability model for FinFET followed by a detailed study on bias and geometry dependency on RF stability of FinFET. The study illustrates the geometrical parameters like fin thickness, fin height, and spacer length and gate and drain biases with gate metal work function that has an impact on RF stability performance. Finally, the optimized device parameters are presented.

In Chap. 6, the bias and geometry optimization of SNWT are discussed. The RF stability modeling is presented followed by a detailed study on the effect of silicon radius and gate alignment on the RF stability performance of silicon nanowire transistor.

Chapter 7 provides an insight into the RF stability performance of SELBOX ITJLFET, and also the impact of bias and geometrical parameters on the RF stability of the device is presented.

Contents: