 Название: Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications
Автор: N. Mohankumar
Издательство: CRC Press
Год: 2022
Страниц: 143
Язык: английский
Формат: pdf (true)
Размер: 21.7 MB
High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters.
In this era of high-speed communication, the semiconductor industry is focused on fabricating high-speed devices with reduced short-channel effects and minimal power dissipation. To achieve high-speed performance, III-V compound semiconductors have emerged as a suitable alternative over conventional silicon (Si) channel devices. The semiconductor industry has been dominated by silicon technology for decades with its established complementary metal-oxide-semiconductor (CMOS) process. However, during the scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) below 22 nm, discrepancies, such as an increase in short-channel effects, affect the performance of the device. To overcome this problem, high electron mobility transistors (HEMTs) arrived as promising candidates because of their reliability when compared to other devices such as silicon nanowires and carbon nanotubes.
For applications requiring terahertz (THz) waves, the novel HEMT device with III-V materials, such as InAlAs, InGaAs, and InAs, are used as sources for achieving the terahertz spectrum. In particular, for defense and medical applications, these devices can produce terahertz radiation, loosely defined as having a frequency from 0.1 to 10 THz. This high frequency is made possible by proper device scaling, increasing the concentration of carrier in the channel and achieving low noise from the device. Although scaling of the device gives better performance, it also increases the short-channel effects in the device. To mitigate this effect, a double-gate technology removing the buffer from the single-gate structure HEMT is proposed.
Features:
Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs.
Covers novel indium arsenide architectures for achieving terahertz frequencies
Discusses impact of device parameters on frequency response
Illustrates noise characterization of optimized indium arsenide HEMTs
Introduces terahertz electronics including sources for terahertz applications.
This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
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