Название: Introduction to RF Power Amplifier Design and Simulation
Автор: Abdullah E.
Издательство: CRC Press
Год: 2016
Страниц: 450
ISBN: 978-1-4822-3165-6, 1482231654
Формат: PDF
Размер: 20 Мб
Язык: English

Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement.
Featuring numerous illustrations and examples of real-world engineering applications, this book:
Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiers
Describes the high-frequency model and transient characteristics of metal–oxide–semiconductor field-effect transistors
Details active device modeling techniques for transistors and parasitic extraction methods for active devices
Explores network and scattering parameters, resonators, matching networks, and tools such as the Smith chart
Covers power-sensing devices including four-port directional couplers and new types of reflectometers
Presents RF filter designs for power amplifiers as well as application examples of special filter types
Demonstrates the use of computer-aided design (CAD) tools, implementing systematic design techniques

Blending theory with practice, Introduction to RF Power Amplifier Design and Simulation supplies engineers, researchers, and RF/microwave engineering students with a valuable resource for the creation of efficient, better-performing, low-profile, high-power RF amplifiers.

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